Electrical and optical investigations of the donor formation in oxygen-doped germanium
Electrical and optical investigations of the donor formation in oxygen-doped germanium
复制标题
氧掺杂锗中供体形成的电学和光学研究
DOI:
10.1016/0022-3697(62)90009-4
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发表时间:
1962
影响因子:
4
通讯作者:
W. Kaiser
中科院分区:
文献类型:
--
作者:
W. Kaiser
The absorption of atomically dispersed oxygen in germanium is discussed and two corresponding absorption bands at 7.9μ (1260 cm−1) and 11.7μ (855cm−1) reported. During annealing atT< 500°C, donor states,D, in concentrations up to 1017cm−3form and a simultaneous loss of dissolved oxygen, ΔN, can be observed. The ratio ΔN/Dis found to be 4 after prolonged heating at 470°C and 350°C, indicating that four oxygen atoms join together to form one donor. A new absorption band corresponding to this donor was found at 12.7μ (786 cm−1.)