Magnetic tunnel junctions with high magnetoresistance and small bias voltage dependence using epitaxial NiFe(111) ferromagnetic bottom electrodes
Magnetic tunnel junctions with high magnetoresistance and small bias voltage dependence using epitaxial NiFe(111) ferromagnetic bottom electrodes
复制标题
使用外延 NiFe(111) 铁磁底部电极的磁隧道结具有高磁阻和小偏置电压依赖性
DOI：
10.1063/1.1544458
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发表时间：
2003
影响因子：
3.2
通讯作者：
T. Miyazaki
中科院分区：
文献类型：
--
作者：
J. Yu;Hyuck;M. Hayashi;M. Oogane;T. Daibou;H. Nakamura;H. Kubota;Y. Ando;T. Miyazaki
在外延生长的Ni80Fe20底电极和多晶Ni80Fe20底电极上分别制备了Al-O绝缘层，制备了磁隧道结。分别用x射线衍射和原子力显微镜对膜的晶体取向和表面形貌进行了检测。经250℃退火后，具有外延底电极的MTJ的隧道磁阻（TMR）率为51%。该值约为具有多晶底电极的MTJ的两倍（27%）。施加的偏置电压对TMR比值的依赖性也有很大不同。外延和多晶样品的Vhalf值分别约为750 mV和400 mV。
Magnetic tunnel junctions (MTJs) were fabricated using an Al–O insulating layer prepared on an epitaxially grown Ni80Fe20 bottom electrode and on a polycrystalline Ni80Fe20 bottom electrode. Crystallographic orientations and surface morphology of the films were examined using x-ray diffraction and atomic force microscopy, respectively. The MTJ with an epitaxial bottom electrode showed a tunnel magnetoresistance (TMR) ratio of 51% after annealing at 250 °C. This value was about two times larger than that of the MTJ with a polycrystalline bottom electrode (27%). The applied bias voltage dependences of the TMR ratios were also much different. The Vhalf values of epitaxial and polycrystalline samples were about 750 and 400 mV, respectively.