The Interlayer Method: A Universal Tool for Energy Level Alignment Tuning at Inorganic/Organic Semiconductor Heterojunctions

The Interlayer Method: A Universal Tool for Energy Level Alignment Tuning at Inorganic/Organic Semiconductor Heterojunctions
复制标题

DOI:
10.1002/adfm.202010174
复制
发表时间:
2020-12
影响因子:
19
通讯作者:
T. Schultz;Dominique Lungwitz;E. Longhi;S. Barlow;S. Marder;N. Koch
T. Schultz;Dominique Lungwitz;E. Longhi;S. Barlow;S. Marder;N. Koch
中科院分区:
材料科学1区
文献类型:
--
作者:
T. Schultz;Dominique Lungwitz;E. Longhi;S. Barlow;S. Marder;N. Koch

文献摘要

被引文献

相似文献

异质结中无机和有机半导体的组合被认为是克服每种材料类别局限性的有前途的方法。然而,迄今为止,利用这种混合异质结实现改进(光电)电子功能的例子很少。发挥无机/有机半导体异质结全部潜力的关键是能够有意控制界面电子能级。这里展示了一种调整无机/有机半导体界面能级之间偏移的通用方法:层间法。由强电子供体或受体分子组成的单层厚中间层插入两个半导体之间,并由于与无机半导体的电荷转移而改变能级排列。通过调整氢化硅相对于真空处理的分子半导体薄膜以及溶液处理的聚合物半导体薄膜的能级,该方法的一般适用性得到了例证,并且表明能级偏移最多可以改变 1.8 eV。这种方法可用于随意调整所需材料对连接处的能级,从而为光电器件的新颖功能铺平了道路。
The combination of inorganic and organic semiconductors in a heterojunction is considered a promising approach to overcome limitations of each individual material class. However, to date only few examples of improved (opto‐)electronic functionality have been realized with such hybrid heterojunctions. The key to unraveling the full potential offered by inorganic/organic semiconductor heterojunctions is the ability to deliberately control the interfacial electronic energy levels. Here, a universal approach to adjust the offset between the energy levels at inorganic/organic semiconductor interfaces is demonstrated: the interlayer method. A monolayer‐thick interlayer comprising strong electron donor or acceptor molecules is inserted between the two semiconductors and alters the energy level alignment due to charge transfer with the inorganic semiconductor. The general applicability of this method by tuning the energy levels of hydrogenated silicon relative to those of vacuum‐processed films of a molecular semiconductor as well as solution‐processed films of a polymer semiconductor is exemplified, and is shown that the energy level offset can be changed by up to 1.8 eV. This approach can be used to adjust the energy levels at the junction of a desired material pair at will, and thus paves the way for novel functionalities of optoelectronic devices.