Superconductivity in thin-film germanium in the temperature regime around 1 K
Superconductivity in thin-film germanium in the temperature regime around 1 K
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1 K 左右温度范围内薄膜锗的超导性
DOI：
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发表时间：
2010
期刊：
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通讯作者：
J. Wosnitza
中科院分区：
文献类型：
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作者：
T. Herrmannsdörfer;R. Skrotzki;V. Heera;O. Ignatchik;M. Uhlarz;A. Mücklich;M. Posselt;B. Schmidt;K. Heinig;W. Skorupa;M. Voelskow;C. Wündisch;M. Helm;J. Wosnitza
我们报告了 p 型掺杂锗超导性的最新发现，该材料是通过将镓离子注入近本征立方 Ge 中而制成的。根据具体的制备和退火条件，我们证明了可以在 Ge 主体的薄 p 掺杂层中产生和定制超导性。通过仔细调整退火参数，我们能够在 Ga 峰值浓度约为 10 at.% 时将超导起始温度提高到约 1.4 K。这一进步和大约钱德拉塞卡-克洛斯顿极限大小的大面内临界磁场使得薄膜掺镓锗 (Ge:Ga) 对技术应用更具吸引力。人们可能对在半导体环境中利用片上薄膜超导性特别感兴趣，因为我们的 Ge:Ga 制备方法与当今用于大规模生产逻辑电路的最先进的半导体工艺完全兼容。继在硅和金刚石中发现超导性之后，我们的工作又在掺杂元素半导体中以及在迄今为止尚未发现超导性的少数剩余“元素周期表岛屿”之一中添加了另一个意想不到的超导性观察。
We report recent discoveries of superconductivity in p-type-doped germanium which has been fabricated by implantation of gallium ions into near-intrinsic cubic Ge. Depending on the detailed preparation and annealing conditions, we demonstrate that superconductivity can be generated and tailored in thin p-doped layers of the Ge host. By carefully adjusting the annealing parameters, we have been able to raise the onset temperature of superconductivity to about 1.4 K at a Ga peak concentration of ∼ 10 at.%. This progress and the large in-plane critical magnetic field of about the size of the Chandrasekhar–Clogston limit makes thin-film Ga-doped Ge (Ge:Ga) even more attractive for technological applications. There might be particular interest to utilize on-chip thin-film superconductivity in a semiconducting environment as our preparation method of Ge:Ga is fully compatible with state-of-the-art semiconductor processing used nowadays for the mass production of logic circuits. After its finding in Si and diamond, our work adds another unexpected observation of superconductivity in doped elemental semiconductors and in one of the few remaining ‘islands of the periodic table of elements’ on which superconductivity has not been found so far.