Mechanisms of nanostructural and morphological evolution of CeO2 functional films by chemical solution deposition
Mechanisms of nanostructural and morphological evolution of CeO2 functional films by chemical solution deposition
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DOI：
10.1088/0957-4484/16/9/066
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发表时间：
2005-07
期刊：
影响因子：
3.5
通讯作者：
F. Sandiumenge;A. Cavallaro;J. Gázquez;T. Puig;X. Obradors;J. Arbiol;H. Freyhardt
中科院分区：
文献类型：
--
作者：
F. Sandiumenge;A. Cavallaro;J. Gázquez;T. Puig;X. Obradors;J. Arbiol;H. Freyhardt
调整的界面面积是必不可少的优化纳米结构的CeO2在各种应用。在这项工作中，我们研究氧化诱导过渡的微观结构机制，从部分取向，颗粒状和多孔的纳米结构到致密的外延CeO2薄膜从化学溶液中沉积。在还原气氛条件下的结晶结果在纳米颗粒状微观结构与高分数的C装饰晶界和间隙空腔。在氧化条件下退火去除C杂质并促进晶粒生长，从而产生完全外延膜，以及稳定否则在能量上禁止的极性（001）平面。提出了一种考虑杂质诱导的晶界阻挡机制和通过表面氧化稳定（001）面的机制。
Tuning the interfacial area is essential for the optimization of nanostructured CeO2 in a variety of applications. In this work, we investigate the microstructural mechanism of an oxidation-induced transition from a partially oriented, granular and porous nanostructure to a dense epitaxial one in CeO2 films deposited from chemical solutions. Crystallization under reducing atmospheric conditions results in a nanometric granular microstructure with a high fraction of C decorating grain boundaries and interstitial cavities. Annealing in oxidizing conditions removes C impurities and promotes grain growth, resulting in a fully epitaxial film, as well as stabilizing the otherwise energetically prohibitive polar (001) planes. A mechanism that considers an impurity induced grain boundary blocking mechanism and the stabilization of (001) planes via surface oxidation is proposed.