Degradation in the ferroelectric and piezoelectric properties of Pb(Zr,Ti)O3 thin films derived from a MEMS microfabrication process
Degradation in the ferroelectric and piezoelectric properties of Pb(Zr,Ti)O3 thin films derived from a MEMS microfabrication process
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MEMS 微加工工艺产生的 Pb(Zr,Ti)O3 薄膜的铁电和压电性能下降
DOI：
10.1088/0960-1317/17/7/004
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发表时间：
2007
期刊：
影响因子：
--
通讯作者：
R. Maeda
中科院分区：
文献类型：
--
作者：
T. Kobayashi;M. Ichiki;R. Kondou;K. Nakamura;R. Maeda
研究了微机电系统（MEMS）微加工工艺对Pb（Zr，Ti）O3（PZT）薄膜铁电和压电性能退化的影响。在绝缘体上硅（SOI）衬底上制备了Pt/Ti/PZT/Pt/Ti/SiO2多层膜。通过MEMS微加工工艺将多层膜制成压电微悬臂梁。在微加工工艺之后，正反射偏振和负反射偏振减小到初始值的56%和35%。结果表明，PZT和Pt之间的顶部界面比底部界面遭受更大的损伤。我们还发现，PZT薄膜的湿法腐蚀，特别是降低铁电性能。制造的悬臂梁的位移的蝶形曲线显示出不对称的形状。这反映了PZT和Pt薄膜之间的顶部界面的较大损伤。PZT薄膜的横向压电常数d31估计为−72 pm V−1。
We have investigated the influence of the microfabrication processes for microelectromechanical systems (MEMS) on the degradation in the ferroelectric and piezoelectric properties of Pb(Zr,Ti)O3 (PZT) thin films. Multilayers of Pt/Ti/PZT/Pt/Ti/SiO2 were deposited on silicon-on-insulator (SOI) wafers. The multilayers were fabricated into piezoelectric micro cantilevers through a MEMS microfabrication process. The positive and negative remanent polarizations were reduced to 56% and 35% of the initial value after the microfabrication process. The results indicated that the top interface between PZT and Pt sustained more damage than the bottom interface. We have also found that wet etching of PZT thin films especially degrades the ferroelectric property. The butterfly curve for the displacement of the fabricated cantilevers displayed an asymmetric shape. This reflects the greater damage to the top interface between the PZT and Pt thin films. The transverse piezoelectric constant, d31, of the PZT thin films is estimated to be −72 pm V−1.