Multiphoton route to ZnO nanowire lasers.
Multiphoton route to ZnO nanowire lasers.
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DOI：
10.1364/ol.31.003345
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发表时间：
2006-11
期刊：
影响因子：
3.6
通讯作者：
Chunfeng Zhang;Zhi-wei Dong;Guan-Jun You;Shixiong Qian;H. Deng
中科院分区：
文献类型：
--
作者：
Chunfeng Zhang;Zhi-wei Dong;Guan-Jun You;Shixiong Qian;H. Deng
在强飞秒激光激励下，研究了室温下ZnO体晶和纳米线的多光子吸收诱导受激发射和激光发射。当激发超过一定阈值时，体晶和纳米线均出现了紫外激发峰，ZnO纳米线出现了线宽约0.5 nm的尖锐激光峰。发射特性归因于在宽禁带半导体中受二光子和三光子吸收过程激发的载流子复合的带边发射。
With intense femtosecond laser excitation, multiphoton absorption-induced stimulated emission and laser emission in ZnO bulk crystal and nanowires have been demonstrated at room temperature. UV-stimulated emission peaks appeared in both bulk crystal and nanowires when the excitation exceeded certain thresholds, and a sharp lasing peak with a linewidth of ~0.5 nm was observed from ZnO nanowires. The emission properties were attributed to the band-edge emission of the recombination of carriers excited by two- and three-photon absorption processes in the wide-bandgap semiconductor.