Thermoelectric performance of quaternary Cu–Bi–Sb–Te alloys prepared by cold pressing
Thermoelectric performance of quaternary Cu–Bi–Sb–Te alloys prepared by cold pressing
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DOI：
10.1016/j.jallcom.2005.04.217
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发表时间：
2006-05
影响因子：
6.2
通讯作者：
J. Cui
中科院分区：
文献类型：
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作者：
J. Cui
采用冷压法制备了通式为CuxBi0.5Sb1.5− xTe 3（x=0 ~ 0.4）的四元Cu-Bi-Sb-Te合金，并对其热电性能进行了评价。结果发现，无论是电性能和热性能密切相关的摩尔分数x，即铜浓度。当摩尔分数x控制在0.05和0.1时，获得了上级的电性能。较高的Cu含量不仅使塞贝克系数（当x=0.4时）恶化，而且使电导率（x≥0.13）恶化，即使获得低的热导率（x=0.4）。在442 K时，合金（x=0.05-0.1）的最大优值ZT约为0.74，约为现有材料Bi_（0.5）Sb_（1.5）Te_3的2.7倍。
Quaternary Cu–Bi–Sb–Te alloys with general formula of CuxBi0.5Sb1.5−xTe3(x=0–0.4) were prepared by cold pressing and their thermoelectric performance was evaluated. It was found that both the electrical and thermal properties were closely related with the mole fraction x, i.e. Cu concentration. Superior electrical properties were obtained when mole fraction x was controlled to be 0.05 and 0.1. Not only can higher Cu content deteriorate the Seebeck coefficients (when x=0.4), but also the electrical conductivities (x≥0.13), even though low thermal conductivities were obtained (x=0.4). A measurement showed that the maximum figure of merit ZT, corresponding to the alloys (x=0.05–0.1), is about 0.74, approximate 2.7 times that of state-of-the-art material Bi0.5Sb1.5Te3at 442K.