Resistive-Switching Memory Effects of NiO Nanowire/Metal Junctions
Resistive-Switching Memory Effects of NiO Nanowire/Metal Junctions
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DOI：
10.1021/ja101742f
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发表时间：
2010-05-19
影响因子：
15
通讯作者：
Park, Bae Ho
中科院分区：
文献类型：
--
作者：
Oka, Keisuke;Yanagida, Takeshi;Park, Bae Ho
我们已经证明了建设高度稳定的电阻开关（RS）结与金属/NiO纳米线/金属结构，并用它们来阐明氧化还原事件在纳米级双极RS的关键作用。所提出的方法利用氧化物纳米线/金属结提供了一个重要的系统和平台，研究各种氧化物材料的纳米RS机制。
We have demonstrated the construction of highly stable resistive switching (RS) junctions with a metal/NiO nanowire/metal structure and used them to elucidate the crucial role of redox events in the nanoscale bipolar RS. The presented approaches utilizing oxide nanowire/metal junctions offer an important system and platform for investigating nanoscale RS mechanisms of various oxide materials.