Phonon confinement effect of silicon nanowires synthesized by laser ablation
Phonon confinement effect of silicon nanowires synthesized by laser ablation
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DOI：
10.1063/1.1931055
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发表时间：
2005-05-23
影响因子：
4
通讯作者：
Ito, S
中科院分区：
文献类型：
--
作者：
Fukata, N;Oshima, T;Ito, S
通过对激光烧蚀合成的连续热氧化硅纳米线的拉曼散射测量，观察到硅光学声子峰逐渐下移和不对称增宽。这种降频和展宽可以用声子约束效应来解释。进一步的热氧化产生了相反的变化；即，光学声子峰的上升。这被认为是由于压缩应力，因为这种应力通过去除SiNW核心周围形成的氧化层而减轻，从而导致光学声子峰的下移。(c) 2005年美国物理研究所。
A gradual downshift and asymmetric broadening of the Si optical phonon peak were observed by Raman scattering measurements of continuously thermally oxidized silicon nanowires (SiNWs) synthesized by laser ablation. This downshift and broadening can be interpreted by the phonon confinement effect. Further thermal oxidation produced a reverse change; namely, an upshift of the optical phonon peak. This is considered to be due to compressive stress since this stress was relieved by removing the oxide layers formed around the SiNW cores, resulting in a downshift of the optical phonon peak. (c) 2005 American Institute of Physics.