Electrodeposition Parameters Dramatically Influence the Morphology, Stability, and Performance of n‐Si/Pt Light‐Addressable Electrochemical Sensors

Electrodeposition Parameters Dramatically Influence the Morphology, Stability, and Performance of n‐Si/Pt Light‐Addressable Electrochemical Sensors
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DOI:
10.1002/celc.202300400
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发表时间:
2023-11
期刊:
影响因子:
4
通讯作者:
Jocelyn B. Hernandez;Zackary D. Epright;Irina M. Terrero Rodríguez;Glen D. O'Neil
Jocelyn B. Hernandez;Zackary D. Epright;Irina M. Terrero Rodríguez;Glen D. O'Neil
中科院分区:
化学3区
文献类型:
--
作者:
Jocelyn B. Hernandez;Zackary D. Epright;Irina M. Terrero Rodríguez;Glen D. O'Neil

文献摘要

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在过去的几年里,光可寻址电化学(LAE)传感器显示出了巨大的应用前景,因为它们可以在单个宏观电极上进行多个局部电化学测量,从而在成像、生物传感、表面图案化和多路复用方面开辟了应用前景。在这项研究中,我们研究了电沉积对在n-Si和电沉积的铂之间形成LAE传感器的影响。我们通过在不同的条件下在新刻蚀的n-Si上电沉积铂来制备传感器,改变铂前体浓度、电沉积时间、支持电解液和电位波形。我们结合原子力显微镜、电化学阻抗谱和循环伏安法对传感器进行了表征。这项研究表明,电沉积参数对电沉积表面的形貌、传感器的稳定性和对H_2O_2的灵敏度有显著的影响。具体地说,我们观察到,与较低的铂前驱体浓度制备的连续铂薄膜相比,较高的铂前体浓度制备的连续铂薄膜更稳定,具有更好的线性度、更高的灵敏度和更宽的动态范围。稳定性和H_2O_2传感性能的提高与组成薄膜的铂岛的增加密切相关。这些数据突出了半导体/金属结LAE传感器中金属的形态对稳定性和灵敏度等重要性能指标的影响。它们还表明,需要使用微米和纳米级成像技术研究半导体/金属LAE传感器,以便更深入地了解其性能特征。
Light addressable electrochemical (LAE) sensors have seen great utility in the past several years because they enable multiple localized electrochemical measurements to be performed on a single macroscopic electrode, opening up applications in imaging, biosensing, surface patterning, and multiplexing. In this study, we investigated the effects of electrodeposition on the formation of LAE sensors formed between n‐Si and electrodeposited Pt. We prepared sensors by electrodepositing Pt onto freshly‐etched n‐Si under a variety of conditions, varying the Pt precursor concentration, electrodeposition time, supporting electrolyte, and potential waveform. We characterized the sensors using a combination of atomic force microscopy, electrochemical impedance spectroscopy, and cyclic voltammetry. This study shows that the electrodeposition parameters have a dramatic impact on the morphology of the electrodeposited surfaces, sensor stability, and sensitivity towards H2O2. Specifically, we observed that continuous Pt films prepared with a higher Pt precursor concentration were more stable and had better linearity, higher sensitivity, and broader dynamic range than those prepared with a lower Pt precursor concentration. The stability and increased H2O2 sensing performance correlate strongly with an increase in the Pt islands which make up the film. These data highlight that the morphology of the metal in semiconductor/metal junction LAE sensors has an impact on important performance metrics like stability and sensitivity. They also demonstrate the need for semiconductor/metal LAE sensors to be studied using micro‐ and nanoscale imaging techniques in order to more deeply understand their performance characteristics.