Efficient Electron Transfer in i-Motif DNA with a Tetraplex Structure
Efficient Electron Transfer in i-Motif DNA with a Tetraplex Structure
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DOI:
10.1002/anie.201306017
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发表时间:
2013-12-02
影响因子:
16.6
通讯作者:
Majima, Tetsuro
中科院分区:
文献类型:
--
作者:
Choi, Jungkweon;Tanaka, Atsushi;Majima, Tetsuro
The oxidation and reduction of DNA is closely related to the damage of DNA and the repair of damaged DNA, respectively. DNA has been also regarded as an excellent material for developing DNA-based molecular electronic devices because of its ability as electron carrier and its electrical conductance. Thus, understanding DNA-mediated charge transfer is a prerequisite for the application of DNA in biomedical science and bio-nanotechnology. DNA-mediated charge transfer has been extensively studied by theory and experiments.[1] However, most studies on DNA-mediated charge transfer have focused on the oxidative hole transfer in DNA, whereas relatively few studies have been done on reductive electron transfer.Generally, DNA-mediated hole transfer occurs over a distance longer than 200 [2] and hole transfer along DNA involves many steps of short-distance charge transfer between stacked guanine (G) bases because G among the four natural DNA bases is most sensitive to oxidation.[3] The hole transfer rate depends on the inserted nucleobase between GC base pairs. In addition, delocalization of the charge over the stacked G bases along the DNA stem has been reported. Meanwhile, the distance for transfer of an excess electron is shorter than that for a hole in DNA. Recently, our group confirmed that an excess electron can migrate over 34 through base pairs [4] and the hopping rate of the excess electron among consecutive thymines (T) is faster than the hole trapping rate among adenines (A) and Gs.[5] Furthermore, we showed that single-step electron transfer (through a superexchange mechanism) between a donor (D) in the