The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers
The effect of temperature dependent processes on the performance of 1.5-μm compressively strained InGaAs(P) MQW semiconductor diode lasers
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DOI：
10.1109/68.701507
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发表时间：
1998-08-01
影响因子：
2.6
通讯作者：
Thijs, PJA
中科院分区：
文献类型：
--
作者：
Sweeney, SJ;Phillips, AF;Thijs, PJA
我们测量了InGaAs(P)基1.5微米压缩应变多量子阱半导体激光器从90K到室温以上的阈值电流I_(Th)和自发辐射特性。结果表明，在一个临界点温度以下，T-B近似为130K，i-th及其与温度的关系受辐射电流的控制。在此温度以上，热激活俄歇复合过程成为导致I-TH及其温度敏感性的主要复合机制。在室温下，非辐射俄歇复合约占这些器件阈值电流的80%。
We describe measurements of the threshold current I-th and spontaneous emission characteristics of InGaAs (P)-based 1.5-mu m compressively strained multiple-quantum-well semiconductor lasers from 90 K to above room temperature. We show that below a break-point temperature, T-B approximate to 130 K, I-th and its temperature dependence are governed by the radiative current. Above this temperature, a thermally activated Auger recombination process becomes the dominant recombination mechanism responsible for both I-th and its temperature sensitivity. At room temperature nonradiative Auger recombination is found to account for approximately 80% of the threshold current in these devices.