Lorentz factor determination for local electric fields in semiconductor devices utilizing hyper-thin dielectrics
Lorentz factor determination for local electric fields in semiconductor devices utilizing hyper-thin dielectrics
复制标题
利用超薄电介质的半导体器件中局部电场的洛伦兹因子测定
DOI：
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发表时间：
2015
期刊：
影响因子：
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通讯作者：
J. McPherson
中科院分区：
文献类型：
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作者：
J. McPherson
研究了超薄介质的局部电场（使介质中极性分子键发生扭曲、极化和减弱的场）。目前，先进的半导体器件需要超薄电介质。本文的研究表明，使用洛伦兹因子L = 1/3来描述介电层中的局部电场的常用方法仍然适用于超薄介电体。然而，在器件结构的非常边缘，宏观/麦克斯韦电场Ediel的上升发生，这导致有效洛伦兹因子Leff的急剧上升。在电容器和晶体管边缘，发现Leff增加到值2/3 < Leff < 1。Leff的增加导致器件边缘的局部电场比介电体大50%-100%。这种局部电场的增加有助于削弱极性键，从而使它们更容易受到标准玻尔兹曼和/或电流驱动过程的破坏。这是我…
The local electric field (the field that distorts, polarizes, and weakens polar molecular bonds in dielectrics) has been investigated for hyper-thin dielectrics. Hyper-thin dielectrics are currently required for advanced semiconductor devices. In the work presented, it is shown that the common practice of using a Lorentz factor of L = 1/3, to describe the local electric field in a dielectric layer, remains valid for hyper-thin dielectrics. However, at the very edge of device structures, a rise in the macroscopic/Maxwell electric field Ediel occurs and this causes a sharp rise in the effective Lorentz factor Leff. At capacitor and transistor edges, Leff is found to increase to a value 2/3 < Leff < 1. The increase in Leff results in a local electric field, at device edge, that is 50%–100% greater than in the bulk of the dielectric. This increase in local electric field serves to weaken polar bonds thus making them more susceptible to breakage by standard Boltzmann and/or current-driven processes. This has i...