Frequency and power limitations of Class-D transistor amplifiers

Frequency and power limitations of Class-D transistor amplifiers
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D 类晶体管放大器的频率和功率限制

DOI:
10.1109/jssc.1969.1049950
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发表时间:
1969
影响因子:
5.4
通讯作者:
D. Page
D. Page
中科院分区:
工程技术1区
文献类型:
--
作者:
W. J. Chudobiak;D. Page

文献摘要

被引文献

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详细研究了两种基本调谐D类放大器的过渡和饱和损耗机制,作为驱动波形、信号频率和晶体管类型的函数。电荷控制方法是用来获得最佳的驱动波形,连同近似表达式的各种贡献的过渡时间,实验验证。据发现,对于高频操作,使用简单的外延晶体管的电流开关系统提供了最高的输出功率与晶体管故障的可能性最小,虽然与电压开关的效率稍低。当不使用简单的外延晶体管时,发现电压开关系统是优选的。给出了一个例子的电流开关放大器的设计提供了一个连续的功率为1千瓦,在500千赫的整体系统效率大于90%的可变负载。
The transition and saturation loss mechanisms of the two basic tuned Class-D amplifiers are studied in detail, as functions of drive waveform, signal frequency, and type of transistor. The charge control approach is used to derive optimum drive waveforms, together with approximate expressions for the various contributions to transition time that are verified experimentally. It is found that for high-frequency operation, the current-switching system using simple epitaxial transistors provides the highest output power with least likelihood of transistor failure, although with a somewhat lower efficiency than the voltage-switch. The voltage-switching system is found to be preferable when simple epitaxial transistors are not used. An example is given of a current-switching amplifier designed to deliver a continuous power of 1 kW at 500 kHz with an overall system efficiency of greater than 90 percent into a variable load.