Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering
Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering
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DOI:
10.1063/1.5008451
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发表时间:
2017-11
影响因子:
4
通讯作者:
Kaikai Liu;Haiding Sun;F. AlQatari;Wenzhe Guo;Xinwei Liu;Jingtao Li;C. Castanedo;Xiaohang Li
中科院分区:
文献类型:
--
作者:
Kaikai Liu;Haiding Sun;F. AlQatari;Wenzhe Guo;Xinwei Liu;Jingtao Li;C. Castanedo;Xiaohang Li
The spontaneous polarization (SP) and piezoelectric (PZ) constants of BxAl1-xN and BxGa1-xN (0 ≤ x ≤ 1) ternary alloys were calculated with the hexagonal structure as reference. The SP constants show moderate nonlinearity due to the volume deformation and the dipole moment difference between the hexagonal and wurtzite structures. The PZ constants exhibit significant bowing because of the large lattice difference between binary alloys. Furthermore, the PZ constants of BxAl1-xN and BxGa1-xN become zero at boron compositions of ∼87% and ∼74%, respectively, indicating non-piezoelectricity. The large range of SP and PZ constants of BxAl1-xN (BAlN) and BxGa1-xN (BGaN) can be beneficial for the compound semiconductor device development. For instance, zero heterointerface polarization Δ P can be formed for BAlN and BGaN based heterojunctions with proper B compositions, potentially eliminating the quantum-confined Stark effect for c-plane optical devices and thus removing the need of non-polar layers and substrate...