LATTICE THERMAL CONDUCTIVITY OF DISORDERED SEMICONDUCTOR ALLOYS AT HIGH TEMPERATURES
LATTICE THERMAL CONDUCTIVITY OF DISORDERED SEMICONDUCTOR ALLOYS AT HIGH TEMPERATURES
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DOI：
10.1103/physrev.131.1906
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发表时间：
1963-01-01
期刊：
影响因子：
--
通讯作者：
ABELES, B
中科院分区：
文献类型：
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作者：
ABELES, B
用Klemens-Callaway理论推导了无序半导体合金的高温导热系数。假定应变和质点缺陷的倒数弛豫时间与频率ω有关，而对于正常和非简谐三声子过程，倒数弛豫时间与频率ω有关。导热系数用合金及其成分的晶格参数和平均原子量来表示。对于300-1200K的Ge-Si合金和300K的(Ga，In)As合金，理论计算结果与已发表的实验数据符合得很好，其中umclapp与正常弛豫时间的比值为2.5。结果表明，Ge-Si合金的高热阻主要是由质量缺陷散射引起的，而(Ga，In)As合金的高热阻主要是由应变散射引起的。
The high-temperature thermal conductivity of a disordered semiconductor alloy is derived using the Klemens-Callaway theory. It is assumed that the reciprocal relaxation times depend on frequency ω as ω 4 for strain and mass point defects and as ω 2 for normal and umklapp three-phonon anharmonic processes. The thermal conductivity is expressed in terms of the lattice parameters and mean atomic weights of the alloy and its constituents. Agreement is obtained between theory and published experimental data on Ge-Si alloys at temperatures 300-1200 K, and on (Ga, In) As alloys at 300 K, using the value 2.5 for the ratio of umklapp to normal relaxation times. It is found that the large thermal resistivity of Ge-Si alloys is predominantly due to mass defect scattering, whereas that of (Ga, In) As alloys is mainly due to strain scattering.