Dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene (DTBDT) as Semiconductor for High-Performance, Solution-Processed Organic Field-Effect Transistors
Dithieno[2,3-d;2′,3′-d′]benzo[1,2-b;4,5-b′]dithiophene (DTBDT) as Semiconductor for High-Performance, Solution-Processed Organic Field-Effect Transistors
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DOI：
10.1002/adma.200802031
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发表时间：
2009-01-12
影响因子：
29.4
通讯作者：
Muellen, Klaus
中科院分区：
文献类型：
--
作者：
Gao, Peng;Beckmann, Dirk;Muellen, Klaus
报道了一种新的具有四个对称稠合噻吩环单元的五环稠并五苯类似物（二噻吩并[2，3-d; 2 '，3'-d ']苯并[1，2-B; 4，5-b']二噻吩，C-n-DTBDT）的简便合成方法。在从溶液中对准该材料之后，获得了用于有机场效应晶体管的薄膜，导致高达1.7 cm（2）V-1 s（-1）的优异的空穴迁移率和10（7）的开/关比。
The facile synthesis of a new five-ring-fused pentacene analog with four symmetrically fused thiophene ring units (Dithieno[2,3-d;2',3'-d']benzo[1,2-b;4,5-b']dithiophene, C-n-DTBDT) is presented. After aligning this material from solution, thin films for organic field-effect transistors were obtained, resulting in excellent hole mobilities of up to 1.7 cm(2) V-1 s(-1), and on/off ratio of 10(7).