Energy dependence of electron-capture cross section of gap states in n -type a -Si:H
Energy dependence of electron-capture cross section of gap states in n -type a -Si:H
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n型a-Si:H中能隙态电子捕获截面的能量依赖性
DOI：
10.1103/physrevb.25.4313
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发表时间：
1982
期刊：
影响因子：
--
通讯作者：
Kazunobu Tanaka
中科院分区：
文献类型：
--
作者：
H. Okushi;Y. Tokumaru;S. Yamasaki;H. Oheda;Kazunobu Tanaka
采用等温电容瞬态光谱法测量了$a$-Si:H中连续分布的陷阱能级的捕获截面，并首次确定了间隙态电子捕获截面的能量依赖性。实验结果表明，局域能级的电子捕获截面随着从导带迁移边缘开始测量的能量深度呈指数减小，表明在$a$-Si:H的深隙态中，多声子发射在电子捕获过程中占主导地位。
Isothermal capacitance transient spectroscopy has been employed for the measurement of the capture cross section of continuously distributed trap levels in $a$-Si:H, and the energy dependence of the electron-capture cross section of gap states has been determined for the first time. Experimental results indicate that an electron-capture cross section of a localized level decreases exponentially with an energy depth measured from the mobility edge of the conduction band, suggesting that the multiphonon emission predominates in the electron-capture process at the deep gap states in $a$-Si:H.