Experimental Probing of the Bias Dependent Self-Heating in AlGaN/GaN HEMTs With a Transparent Indium Tin Oxide Gate

Experimental Probing of the Bias Dependent Self-Heating in AlGaN/GaN HEMTs With a Transparent Indium Tin Oxide Gate
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具有透明氧化铟锡栅极的 AlGaN/GaN HEMT 中偏压相关自加热的实验探测

DOI：
10.1115/ipack2022-98800
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发表时间：
2022
期刊：
ASME 2022 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems
影响因子：
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通讯作者：
Choi, Sukwon
Choi, Sukwon
中科院分区：
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文献类型：
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作者：
Karim, Anwarul;Kim, Tae Kyoung;Shoemaker, Daniel;Song, Yiwen;Kwak, Joon Seop;Choi, Sukwon

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