Heterogeneous direct bonding of diamond and semiconductor substrates using NH3/H2O2 cleaning
Heterogeneous direct bonding of diamond and semiconductor substrates using NH3/H2O2 cleaning
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DOI：
10.1063/5.0026348
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发表时间：
2020-11-16
影响因子：
4
通讯作者：
Higurashi, Eiji
中科院分区：
文献类型：
--
作者：
Fukumoto, Shoya;Matsumae, Takashi;Higurashi, Eiji
在大气条件下，用NH_3/H_2O_2混合物清洗金刚石(111)基片可形成低温直接键合。当钻石表面与200℃的等离子体激活的二氧化硅表面结合时，结合强度足够高，以至于在剪切试验中钻石内部发生解理。此外，用NH_3/H_2O_2混合物处理的金刚石和硅衬底可以与2.5 nm厚的氧化物中间层形成原子键。这种键合方法可以应用于使用钻石的电子器件，因为使用流行的晶片清洗工艺和随后的低温退火法可以实现异质集成。
A diamond (111) substrate cleaned with an NH3/H2O2 mixture could form low-temperature direct bonding under atmospheric conditions. When the diamond surface was bonded with a plasma activated SiO2 surface at 200 degrees C, the bonding strength was sufficiently high so that cleavage within diamond occurred in a shear test. Moreover, the diamond and Si substrates treated with the NH3/H2O2 mixture could form atomic bonds with a 2.5-nm-thick oxide intermediate layer. This bonding method can be applied to electronic devices using diamond because heterogeneous integration can be achieved using a popular wafer cleaning process followed by low-temperature annealing.