Magnetotransport of the Monolayer Graphene Adsorbed by the Inert Gas In The Quantum Hall Regime
Magnetotransport of the Monolayer Graphene Adsorbed by the Inert Gas In The Quantum Hall Regime
复制标题
量子霍尔体系中惰性气体吸附的单层石墨烯的磁输运
DOI:
10.1088/1742-6596/969/1/012130
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发表时间:
2018
期刊:
影响因子:
--
通讯作者:
K. Matsumoto
中科院分区:
文献类型:
--
作者:
A. Fukuda;D. Terasawa;A. Fujimoto ;Y. Kanai;K. Matsumoto
The surface of graphene is easily accessible from outside, and thus it is a suitable material to study the effects of molecular adsorption on the electric transport properties. We investigate the magnetotransport of inert-gas-adsorbed monolayer graphene at a temperature of 4.4 K under a magnetic field ranging from 0 to 7 T. We introduce 4 He or Ar gas at low temperature to graphene kept inside a sample cell. The magnetoresistance change ΔR xx and Hall resistance change ΔR xy from the pristine graphene are measured as a function of gate voltage and magnetic field for one layer of adsorbates. ΔR xx and ΔR xy show oscillating patterns related to the constant filling factor lines in a Landau-fan diagram. Magnitudes of these quantities are relatively higher around a charge neutral point and may be mass-sensitive. These conditions could be optimized for development of a highly sensitive gas sensor.