VOC Over 1.4 V for Amorphous Tin-Oxide-Based Dopant-Free CsPbI2Br Perovskite Solar Cells
VOC Over 1.4 V for Amorphous Tin-Oxide-Based Dopant-Free CsPbI2Br Perovskite Solar Cells
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DOI：
10.1021/jacs.0c02227
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发表时间：
2020-05-27
影响因子：
15
通讯作者：
Miyasaka, Tsutomu
中科院分区：
文献类型：
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作者：
Guo, Zhanglin;Jena, Ajay Kumar;Miyasaka, Tsutomu
CsPbI2Br钙钛矿太阳能电池因其效率的快速发展以及作为叠层太阳能电池顶级电池的巨大潜力而备受关注。然而，迄今为止在大多数情况下观察到的 V-OC 输出与顶部电池所需的输出相差甚远。到目前为止，经过各种处理，报道的冠军V-OC仅为1.32 V，V-OC赤字为0.60 V。在这项工作中，我们发现电子传输层SnCl2前驱体溶液的老化可以通过采用无掺杂聚合物空穴传输材料(HTM)来促进CsPbI2Br太阳能电池的V-OC超过1.40 V，效率超过15.5%，且效率高。再现性。冠军 V-OC 为 1.43 V，V-OC 赤字减少至
CsPbI2Br perovskite solar cells have attracted much attention because of the rapid development in their efficiency and their great potential as a top cell of tandem solar cells. However, the V-OC outputs observed so far in most cases are far from that desired for a top cell. Up to now, with various kinds of treatments, the reported champion V-OC is only 1.32 V, with a V-OC deficit of 0.60 V. In this work, we found that aging of the SnCl2 precursor solution for the electron-transporting layer can promote the V-OC of CsPbI2Br solar cells by employing a dopant-free-polymer hole transport material (HTM) over 1.40 V and efficiency over 15.5% with high reproducibility. With the champion V-OC of 1.43 V, the V-OC deficit was reduced to