Band-Edge Luminescence at Room Temperature of Boron Nitride Synthesized by Thermal Chemical Vapor Phase Deposition
Band-Edge Luminescence at Room Temperature of Boron Nitride Synthesized by Thermal Chemical Vapor Phase Deposition
复制标题
DOI：
10.1143/jjap.46.l287
复制
发表时间：
2007-03
影响因子：
1.5
通讯作者：
O. Tsuda;Kenji Watanabe;T. Taniguchi
中科院分区：
文献类型：
--
作者：
O. Tsuda;Kenji Watanabe;T. Taniguchi
我们成功地合成了六方氮化硼（hBN），它具有强烈的本征带边发光在紫外区，在多晶镍基板上的热化学气相沉积。在室温下测量的阴极发光（CL）光谱中，沉积的氮化硼（BN）在215 nm处有一个强的自由激子发光峰，在226 nm处有另一个发光峰。沉积的BN的拉曼峰的线宽与通过高压/高温（HPHT）方法合成的单晶hBN的线宽相当。这些结果表明，沉积的BN具有与通过HPHT方法合成的单晶hBN一样高的结晶度。
We successfully synthesized hexagonal boron nitride (hBN), which exhibits intense intrinsic band-edge luminescence in the UV region, on a polycrystalline nickel substrate by thermal chemical vapor phase deposition. In cathodoluminescence (CL) spectra measured at room temperature, the deposited boron nitride (BN) exhibited an intense free-exciton luminescence peak at 215 nm with another luminescence peak at 226 nm. The line width of the Raman peak of the deposited BN is comparable to that of single-crystal hBN synthesized by a high-pressure/high-temperature (HPHT) method. These results indicated that the deposited BN has as high crystallinity as single-crystal hBN synthesized by a HPHT method.