Investigations of AlGaN/AlN/GaN MOS-HEMTs on Si Substrate by Ozone Water Oxidation Method
Investigations of AlGaN/AlN/GaN MOS-HEMTs on Si Substrate by Ozone Water Oxidation Method
复制标题
臭氧水氧化法研究Si衬底上AlGaN/AlN/GaN MOS-HEMT
DOI：
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发表时间：
2013
影响因子：
3.1
通讯作者：
Chang‐Luen Wu
中科院分区：
文献类型：
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作者：
Han;Ching;W. Hsu;L. Tseng;B. Chou;C. Ho;Chang‐Luen Wu
采用臭氧水氧化法在Si衬底上生长了Al<sub>0.3</sub>Ga<sub>0.7</sub>N/AlN/GaN金属氧化物半导体高电子迁移率晶体管（HEMTs）。与参考schottky门通HEMT相比，双端栅漏击穿电压（BV<sub>GD</sub>）改善了52.2%，漏源电流密度（I<sub>DS</sub>）在V<sub>GS</sub> = 0 V （I<sub>DSS0</sub>）改善了30.3%，最大I<sub>DS</sub> (I<sub>DS,max</sub>)改善了43.6%，最大外部跨导改善了34.7% (< I >gm</ I >,max)，单位增益截止/最大振荡频率（< I >fT</ I >/< I >f</ I ><sub>max</sub>）改善了52.7%/34.3%。通过在300-550 K的环境温度下对器件进行温度依赖性表征来研究热稳定性。在0-60 h的断开状态（V<sub>GS</sub> = -20 V和V<sub>DS</sub> = 0 V）和0-20 h的导通状态（V<sub>GS</sub> = 2 V和V<sub>DS</sub> = 20 V）下，对器件进行了时间相关的电气可靠性分析，以物理研究主要退化机制。本设计在300- 550k时实现了优异的可靠性和热稳定性。
Al<sub>0.3</sub>Ga<sub>0.7</sub>N/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (HEMTs) grown on Si substrates by using ozone water oxidation method are investigated. Superior improvements of 52.2% in two-terminal gate-drain breakdown voltage (BV<sub>GD</sub>), 30.3% in drain-source current density (I<sub>DS</sub>) at V<sub>GS</sub> = 0 V (I<sub>DSS0</sub>), 43.6% in maximum I<sub>DS</sub> (I<sub>DS,max</sub>), 34.7% in maximum extrinsic transconductance (<i>gm</i>,max), and 52.7%/34.3% in unity-gain cutoff/maximum oscillation frequency (<i>fT</i>/<i>f</i><sub>max</sub>) are achieved as compared with a reference Schottky-gated HEMT. Thermal stability is studied by conducting temperature-dependent characterizations of devices at ambient temperatures of 300-550 K. Time-dependent electrical reliability analyses for the devices stressed in off-state (V<sub>GS</sub> = -20 V and V<sub>DS</sub> = 0 V) for 0-60 h and on-state (V<sub>GS</sub> = 2 V and V<sub>DS</sub> = 20 V) for 0-20 h are also made to physically investigate the dominant degradation mechanisms. Excellent reliability and thermal stability at 300-550 K are achieved by the present design.