Invited) Effect of Low Carbon Concentration on Bulk Lifetime of Silicon Crystal
Invited) Effect of Low Carbon Concentration on Bulk Lifetime of Silicon Crystal
复制标题
特邀）低碳浓度对硅晶体整体寿命的影响
DOI：
10.1149/07204.0057ecst
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发表时间：
2016
期刊：
影响因子：
--
通讯作者：
K. Kashima
中科院分区：
文献类型：
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作者：
M. Higasa;Y. Nagai;S. Nakagawa;K. Kashima
减少绝缘栅双极晶体管（IGBT）等功率半导体器件的电损耗对于节能和减少燃料消耗是必要的。实现低损耗 IGBT 的一个重要因素是提高硅晶体的整体寿命。为了实现更长的整体寿命，我们降低了施加磁场的直拉 (MCZ) 硅中的碳浓度。我们研究了超低碳浓度 MCZ 硅和浮区 (FZ) 硅的体寿命，以阐明碳杂质对体寿命的影响。使用 ASTM F28-75 指定的直流光电导衰减方法测量体寿命。 MCZ 硅的整体寿命随着碳浓度的降低而急剧增加。碳浓度小于1.0×10 15 原子/cm 3 的MCZ硅晶体表现出比FZ硅晶体更长的体寿命。我们证明，降低碳浓度对于延长 MCZ 硅晶体的整体寿命至关重要。
Reducing the electric loss of power semiconductor devices such as insulated-gate bipolar transistors (IGBTs) is necessary for saving energy and reducing fuel consumption. An essential factor for achieving low-loss IGBTs is increasing the bulk lifetime of the silicon crystals. To achieve a longer bulk lifetime, we reduced the carbon concentration in magnetic-field-applied Czochralski (MCZ) silicon. We investigated the bulk lifetime of MCZ silicon with ultralow-carbon-concentration and floating-zone (FZ) silicon to clarify the impact of carbon impurities on the bulk lifetime. The bulk lifetime was measured using a direct-current photoconductive decay method designated by ASTM F28-75. The bulk lifetime of MCZ silicon drastically increased with decreasing carbon concentration. MCZ silicon crystals with a carbon concentration less than 1.0× 10 15 atoms/cm 3 exhibited a longer bulk lifetime than FZ silicon crystals. We demonstrated that carbonconcentration reduction is crucial for increasing the bulk lifetime of MCZ silicon crystals.