NBTI mechanism in ultra-thin gate dielectric - nitrogen-originated mechanism in SiON
NBTI mechanism in ultra-thin gate dielectric - nitrogen-originated mechanism in SiON
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超薄栅介质中的NBTI机理-SiON中的氮源机理
DOI：
10.1109/iedm.2002.1175891
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发表时间：
2002
期刊：
影响因子：
--
通讯作者：
A. Toriumi
中科院分区：
文献类型：
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作者：
Y. Mitani;M. Nagamine;H. Satake;A. Toriumi
研究了具有锡永和SiO/sub 2/2膜的p/sup +/-栅p-MOSFET的负偏压温度（NBT）退化机理。结果表明，掺氟对SiO/sub 2/的NBT降解有促进作用，而对锡永的NBT降解无影响，且锡永的NBT降解活化能低于SiO/sub 2/。从这些实验结果，可以推断，氮源的NBT降解主导锡永中的NBT降解。研究还发现，反型层中存在的非高能空穴对锡永和SiO/sub 2/薄膜的NBT退化都有贡献，而氧化物场对NBT退化是不可或缺的。
We have investigated the mechanism of negative bias temperature (NBT) degradation of p/sup +/-gate p-MOSFETs having SiON and SiO/sub 2/ films. As a result, it was found that NBT degradation of SiO/sub 2/ is improved by fluorine incorporation, while no effect is observed in that of SiON, and that the activation energy of NBT degradation in SiON is lower than that in SiO/sub 2/. From these experimental results, it is inferred that nitrogen-originated NBT degradation dominates NBT degradation in SiON. It was also found that non-energetic holes existing in the inversion layer contribute to NBT degradation for both SiON and SiO/sub 2/ films, and that the oxide field is indispensable for NBT degradation.