Electrically-Pumped GaSb-Based Vertical-Cavity Surface-Emitting Lasers
Electrically-Pumped GaSb-Based Vertical-Cavity Surface-Emitting Lasers
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电泵浦 GaSb 基垂直腔表面发射激光器
DOI：
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发表时间：
2012
期刊：
影响因子：
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通讯作者：
S. Arafin
中科院分区：
文献类型：
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作者：
S. Arafin
本论文重点开发波长范围在 2.3 µm 至 2.6 µm 之间的新型电泵浦、连续波工作、基于 GaSb 的应用 VCSEL。器件中的横向电流限制和折射率引导是通过利用埋入式隧道结 (BTJ) 概念来实现的。所开发的器件具有创纪录的 2.6 µm 长发射波长，具有单模操作和相当宽的无跳频调谐范围。本文广泛讨论了此类激光器的设计、制造，尤其是表征。本文还根据器件表征结果提出了下一代高性能 GaSb-VCSEL 的一些设计原则。这里还介绍了对几个单独设备组件的检查以及它们在设备中的成功实施。这项工作无疑为开发用于气体传感应用的紧凑、可靠且经济高效的光子传感器铺平了道路。
This dissertation focuses on the development of novel electrically-pumped, continuouswave operating GaSb-based application-suited VCSELs in the wavelength range between 2.3 µm and 2.6 µm. Lateral current confinement and index guiding in the device are accomplished by utilizing the buried tunnel junction (BTJ) concept. The developed devices with record long emission wavelengths of 2.6 µm exhibit single-mode operation with a reasonably wide mod-hop free tuning range. The design, fabrication and especially the characterization of such lasers are extensively discussed here. This thesis also presents some design principles for next generation high performance GaSb-VCSELs based on the device characterization results. The examination of the several individual device components and their successful implementation into the device are also covered here. This work certainly paves the way for the development of compact, reliable and cost‐effective photonic sensors used in gas sensing applications.