Raman spectroscopy of strained GeSi alloys deposited on Ge substrates
Raman spectroscopy of strained GeSi alloys deposited on Ge substrates
复制标题
沉积在 Ge 基底上的应变 GeSi 合金的拉曼光谱
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
Y. Zheng
中科院分区：
文献类型：
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作者：
S. Gu;L. Qin;R. Zhang;X. Zhu;Y. Zheng
The Raman scattering method has been successfully used to investigate the properties of GeSi alloys deposited on Ge substrates in this paper. The effect of Si composition and strain in the GeSi alloy on the Raman shifts of Ge-Ge, Ge-Si and Si-Si phonon modes is studied. The relationship between them have been derived by the assumption that the Raman shifts is nearly linear with Si composition and strain in the GeSi alloys. The experimental data show reasonable agreement with the fits.
