Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources
Etching of glass, silicon, and silicon dioxide using negative ionic liquid ion sources
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使用负离子液体离子源蚀刻玻璃、硅和二氧化硅
DOI：
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发表时间：
2018
影响因子：
1.4
通讯作者：
P. Lozano
中科院分区：
文献类型：
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作者：
Tiantong Xu;Z. Tao;P. Lozano
离子液体离子源作为一种新型的离子源，被提出用于聚焦离子束和宽束应用。本文采用离子液体EMI-BF 4（1-乙基-3-甲基咪唑四氟硼酸盐）作为离子源，产生带负电荷的离子，辐照玻璃（Pyrex 7740）、硅和二氧化硅靶。结果表明，负EMI-BF 4离子束可以防止与介电衬底上的表面电荷积累相关的问题，实现至少1.55的SiO2：Si的蚀刻选择性。在较高的离子着陆能量下，玻璃、硅和二氧化硅上的蚀刻速率增加。结果表明，负EMI-BF 4束比传统的金属镓离子束具有更高的产额，这可能是由于氟自由基的化学反应性。离子液体离子源作为一种新型的离子源，被提出用于聚焦离子束和宽束离子束的应用。本文采用离子液体EMI-BF 4（1-乙基-3-甲基咪唑四氟硼酸盐）作为离子源，产生带负电荷的离子，辐照玻璃（Pyrex 7740）、硅和二氧化硅靶。结果表明，负EMI-BF 4离子束可以防止与介电衬底上的表面电荷积累相关的问题，实现至少1.55的SiO2：Si的蚀刻选择性。在较高的离子着陆能量下，玻璃、硅和二氧化硅上的蚀刻速率增加。研究表明，负EMI-BF 4束比传统金属镓离子束具有更高的产额，这可能是由于氟自由基的化学反应性。当与使用正EMI-BF 4光束的结果相比时，该效果也是明显的。
Ionic liquid ion sources have been proposed as a new type of ion source for focused ion beam and broad ion beam applications. In this paper, the ionic liquid EMI-BF4 (1-ethyl-3-methylimidazolium tetrafluoroborate) was used as an ion source to generate negatively charged ions and irradiate glass (Pyrex 7740), silicon, and silicon dioxide targets. The results indicate that negative EMI-BF4 ion beams can prevent issues related to surface charge accumulation on dielectric substrates, achieving etching selectivities of SiO2:Si of at least 1.55. The etching rate increases on glass, silicon, and silicon dioxide at higher ion landing energies. It is shown that the negative EMI-BF4 beam has a higher yield than traditional metal gallium ion beams, likely due to the chemical reactivity of fluorine radicals. This effect is also noticeable when compared to results using positive EMI-BF4 beams.Ionic liquid ion sources have been proposed as a new type of ion source for focused ion beam and broad ion beam applications. In this paper, the ionic liquid EMI-BF4 (1-ethyl-3-methylimidazolium tetrafluoroborate) was used as an ion source to generate negatively charged ions and irradiate glass (Pyrex 7740), silicon, and silicon dioxide targets. The results indicate that negative EMI-BF4 ion beams can prevent issues related to surface charge accumulation on dielectric substrates, achieving etching selectivities of SiO2:Si of at least 1.55. The etching rate increases on glass, silicon, and silicon dioxide at higher ion landing energies. It is shown that the negative EMI-BF4 beam has a higher yield than traditional metal gallium ion beams, likely due to the chemical reactivity of fluorine radicals. This effect is also noticeable when compared to results using positive EMI-BF4 beams.