Electrical properties of NbO and NbO2
Electrical properties of NbO and NbO2
复制标题
NbO 和 NbO2 的电性能
DOI：
10.1016/0022-3697(69)90368-0
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发表时间：
1969
影响因子：
4
通讯作者：
R. Rapp
中科院分区：
文献类型：
--
作者：
J. A. Roberson;R. Rapp
测量了NbO和NbO 2的热电功率和电导率作为温度的函数，在限制氧活性的热力学稳定性的每个化合物。在50-1000°C的温度范围内，NbO 2的电学性质基本上不受氧分压的影响，NbO的电学性质对氧活度的依赖性较小。NbO的热电势和电导率表明该化合物中存在金属键。这种键合的Kreb的模型的基础上讨论的同极键对无机化合物的结构的影响。NbO_2的热电势和电导率表明该化合物是一种ann型本征半导体。讨论了NbO 2中主要离子缺陷的性质及其对氧活度的依赖性。
The thermoelectric power and electrical conductivity were measured for NbO and NbO2as functions of temperature at the limiting oxygen activities for the thermodynamic stability of each of the compounds. The electrical properties of NbO2were essentially independent of oxygen pressure in the temperature range 50–1000°C, and the properties of NbO showed only a small dependence on oxygen activity. The thermoelectric power and electrical conductivity of NbO indicate that metallic bonding exists in this compound. This bonding is discussed on the basis of Kreb's model for the influence of homopolar bonds on the structure of inorganic compounds. The thermoelectric power and electrical conductivity of NbO2indicate that this compound is ann-type intrinsic semiconductor. The nature of the predominant ionic defect in NbO2and its dependence on oxygen activity are discussed.