Hydrostatic Pressure Dependence of the Threshold Current in 1.5 μm Strained Quantum Well Lasers
Hydrostatic Pressure Dependence of the Threshold Current in 1.5 μm Strained Quantum Well Lasers
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1.5 μm 应变量子阱激光器中阈值电流的静水压力依赖性
DOI：
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发表时间：
1996
期刊：
影响因子：
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通讯作者：
P. Thijs
中科院分区：
文献类型：
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作者：
A. Adams;M. Silver;E. O’Reilly;B. Gonul;A. Phillips;S. Sweeney;P. Thijs
结果表明，1.5 μm量子阱激光器的辐射电流服从简单的理论，但在室温下通过器件的总电流主要是俄歇复合。测量的阈值电流的温度和压力依赖关系表明，声子辅助俄歇复合是有效的。这比带对带俄格工艺对带结构的精确形式更不敏感，并且解释了为什么内置应变对阈值电流的温度灵敏度影响很小，以及为什么当从1.5 μm到1.3 μm器件时阈值电流几乎没有变化。
Results are presented which show that the radiative current in 1.5 μm quantum well lasers obeys simple theory, but that the total current through the device at room temperature is dominated by Auger recombination. The measured temperature and pressure dependencies of the threshold current show that it is phonon-assisted Auger recombination that is operative. This is less sensitive than band-to-band Auger processes to the exact form of the band structure and explains why inbuilt strain has little effect on the temperature sensitivity of the threshold current and why there is little change in threshold current as one goes from 1.5 to 1.3 μm devices.