Mixed-mode device simulation
Mixed-mode device simulation
复制标题
混合模式设备仿真
DOI：
10.1109/icmel.2000.840528
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
Siegfried Selberherr
中科院分区：
文献类型：
--
作者：
Tibor Grasser;Siegfried Selberherr
在混合模式器件仿真中，半导体器件基本输运方程的解直接嵌入到电路方程的求解过程中。因此避免了紧凑的建模并获得了更高的精度。我们回顾了混合模式设备仿真的最新技术。此外，我们还介绍了最近的成果，特别是收敛加速技术和处理电热问题的方法。示例部分重点强调了所提出技术的价值和实用性。
In mixed-mode device simulation the solution of the basic transport equations for the semiconductor devices is directly embedded into the solution procedure for the circuit equations. Compact modeling is thus avoided and much higher accuracy is obtained. We review the state of the art in mixed-mode device simulation. In addition we present recent achievements, in particular, techniques for convergence acceleration and methods for dealing with electrothermal problems. Much emphasis is put on the examples section to demonstrate the value and usefulness of the proposed techniques.