Physical and photoelectrochemical characterization of Ti-doped hematite photoanodes prepared by solution growth
Physical and photoelectrochemical characterization of Ti-doped hematite photoanodes prepared by solution growth
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溶液生长制备钛掺杂赤铁矿光电阳极的物理和光电化学表征
DOI：
10.1039/c3ta13453a
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发表时间：
2013-01-01
影响因子：
11.9
通讯作者：
Mao, Samuel S.
中科院分区：
文献类型：
--
作者：
Shen, Shaohua;Kronawitter, Coleman X.;Mao, Samuel S.
我们提出了钛掺杂的赤铁矿（α-Fe 2 O3）薄膜作为光阳极的应用在光电化学（PEC）细胞的水裂解的制造和表征。结果表明，Ti掺杂显著提高了PEC活性，因为发现对于400 nm厚的Ti掺杂膜（0.66 mA cm（-2）），在1.0 V vs. Ag/AgCl电极下的光电流（0.045 mA cm（-2））比未掺杂膜的光电流（0.045 mA cm（-2））高14倍。通过X射线衍射（XRD），拉曼光谱，X射线光电子能谱（XPS），和超快瞬态吸收光谱，以获得有关其结构，电子和电荷载流子的动态特性的信息的薄膜进行了表征。基于所涉及的元素的化学状态以及与Ti掺杂的膜的电荷载流子动力学的表征，它出现的光电流增强是有关的电荷载流子密度的增加或减少的电子-空穴复合。该系统的最高入射光子转换效率（IPCE）测量为27.0%，在360 nm处，在1.23 V的电位相对于可逆氢电极（RHE），这是在400 nm厚的Ti掺杂的α-Fe 2 O 3膜上获得的。
We present the fabrication and characterization of Ti-doped hematite (alpha-Fe2O3) films for application as photoanodes in photoelectrochemical (PEC) cells for water splitting. It is demonstrated that Ti doping significantly improves the PEC activity as the photocurrent at 1.0 V vs. Ag/AgCl electrode for a 400 nm thick Ti-doped film (0.66 mA cm(-2)) was found to be similar to 14 times higher than that of an undoped film (0.045 mA cm(-2)). The films were characterized by X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), and ultrafast transient absorption spectroscopy to obtain information about their structural, electronic, and charge carrier dynamic properties. Based on characterization of the chemical states of the involved elements as well as the charge carrier dynamics of the films with Ti doping, it appears that the photocurrent enhancement is related to an increase in charge carrier density or reduced electron-hole recombination. The highest incident photon conversion efficiency (IPCE) measured for this system was 27.0% at 360 nm at a potential of 1.23 V vs. reversible hydrogen electrode (RHE), which was obtained on a 400 nm thick Ti-doped alpha-Fe2O3 film.