Characteristics of SrBi2Ta2O9 ferroelectric films on Si using LaAlO3 thin film as an insulator
Characteristics of SrBi2Ta2O9 ferroelectric films on Si using LaAlO3 thin film as an insulator
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以LaAlO3薄膜为绝缘体的Si上SrBi2Ta2O9铁电薄膜的特性
DOI：
10.1007/s00339-004-3021-3
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发表时间：
2005
期刊：
影响因子：
--
通讯作者：
N. Ming
中科院分区：
文献类型：
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作者：
Aidong Li;Yongjin Wang;Q. Shao;J. Cheng;D. Wu;H. Ling;Y. Bao;Mu Wang;Zu;N. Ming
研究了以LaAlO_3（LAO）层为绝缘阻挡层的金属-铁电-绝缘体-半导体结构。采用低压金属有机化学气相沉积（MOCVD）方法在n-Si衬底上制备了LAO薄膜。采用金属有机物分解法在650 °C低温下制备了SrBi 2 Ta 2 O 9（SBT）铁电薄膜。MOCVD衍生的LAO缓冲层显示出非晶结构、相对高的介电常数和良好的电学性质。Au/SBT/LAO/n-Si在10 V电压下具有较大的逆时针C-V存储窗口（3.7 V）和较低的漏电流密度（2.5×10-8A/cm 2）。已经证实了磁滞回线是由铁电性引起的。俄歇电子能谱深度分布表明，LAO缓冲层的引入有效地阻止了SBT与Si衬底之间的界面扩散，改善了界面质量。
Metal–ferroelectric–insulator–semiconductor structures using LaAlO3(LAO) layers as an insulating barrier have been investigated. LAO films were deposited on n-Si substrates by low-pressure metalorganic chemical vapor deposition (MOCVD). SrBi2Ta2O9(SBT) films were prepared as ferroelectric layers at a low processing temperature of 650 °C by a metalorganic decomposition method. The MOCVD-derived LAO buffer layer shows an amorphous structure, relatively high dielectric constant, and good electrical properties. Au/SBT/LAO/n-Si exhibits a larger counterclockwise C–V memory window of 3.7 V and a lower leakage-current density of 2.5×10-8A/cm2at an applied voltage of 10 V. It has been confirmed that the hysteresis loop is caused by ferroelectricity. The Auger electron spectrometry depth profile indicates that the introduction of the LAO buffer layer prevents the interfacial diffusion between SBT and the Si substrate effectively and improves the interface quality.