A high-frequency resonant inverter topology with low-voltage stress
A high-frequency resonant inverter topology with low-voltage stress
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DOI：
10.1109/tpel.2008.924616
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发表时间：
2008-07-01
影响因子：
6.7
通讯作者：
Perreault, David J.
中科院分区：
文献类型：
--
作者：
Rivas, Juan M.;Han, Yehui;Perreault, David J.
本文提出了一种新的开关模式谐振逆变器，我们称之为Φ（2）逆变器，这是非常适合于在非常高的频率和快速开/关控制操作。该逆变器拓扑的特点包括低半导体电压应力、小的无源能量存储要求、快速的动态响应和良好的设计灵活性。提出的拓扑结构和操作进行了描述，并介绍了设计过程。实验结果表明，新的拓扑结构。描述了一种原型Phi（2）逆变器，其在30 MHz下切换，并且以高于92%的漏极效率提供超过500 W的射频功率。预计Phi（2）逆变器将在其他应用中用作高性能DC-DC转换器的构建模块。
This paper presents a new switched-mode resonant inverter, which we term the Phi(2) inverter, that is well suited to operation at very high frequencies and to rapid on/off control. Features of this inverter topology include low semiconductor voltage stress, small passive energy storage requirements, fast dynamic response, and good design flexibility. The structure and operation of the proposed topology are described, and a design procedure is introduced. Experimental results demonstrating the new topology are also presented. A prototype Phi(2) inverter is described that switches at 30 MHz and provides over 500 W of radio frequency power at a drain efficiency above 92%. It is expected that the Phi(2) inverter will find use as a building block in high-performance dc-dc converters among other applications.