Impact of optical absorption for THz radiation in GaSb/InAs heterostructures
Impact of optical absorption for THz radiation in GaSb/InAs heterostructures
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GaSb/InAs 异质结构中光吸收对太赫兹辐射的影响
DOI：
10.1109/irmmw-thz46771.2020.9371009
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发表时间：
2021
期刊：
影响因子：
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通讯作者：
R. Ohashi; D. Shimada; M. Koyama; T. Maemoto; S. Sasa; F. Murakami; H. Murakami; M. Tonouchi
中科院分区：
文献类型：
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作者：
祐川 真紀帆;杉野 雄亮;谷辺 徹;小澤 満津雄;R. Ohashi; D. Shimada; M. Koyama; T. Maemoto; S. Sasa; F. Murakami; H. Murakami; M. Tonouchi
通过改变GaSb热电子注入层的厚度，系统地研究了InAs/GaSb/InAs异质结构的太赫兹辐射特性。单调增加的辐射强度观察到的GaSb注入层的厚度减少。增强的辐射相比，没有GaSb注入层的InAs膜仅发生为5 nm的GaSb层厚度。我们还研究了通过引入In0.2Ga0.8Sb注入层对辐射强度的影响，并且发现即使对于20 nm的层厚度也会发生增强的辐射，这意味着InGaSb注入层中的光吸收增加的效果。
Terahertz radiation characteristics were systematically investigated for InAs/GaSb/InAs heterostructures by varying the thickness of the GaSb hot-electron injection layer between 5 and 50 nm. Monotonic increase in the radiation intensity was observed as the GaSb injection layer thickness was reduced. Enhanced radiation compared to InAs film without the GaSb injection layer occurred only for the GaSb layer thickness of 5 nm. We also studied the impact on the radiation intensity by introducing an In0.2Ga0.8Sb injection layer, and found that intensified radiation occurred even for the layer thickness of 20 nm implying the effect of increased optical absorption in the InGaSb injection layer.