Solution Coating of Small Molecule/Polymer Blends Enabling Ultralow Voltage and High-Mobility Organic Transistors
Solution Coating of Small Molecule/Polymer Blends Enabling Ultralow Voltage and High-Mobility Organic Transistors
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DOI：
10.1002/aelm.201800141
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发表时间：
2018-08-01
影响因子：
6.2
通讯作者：
Mannsfeld, Stefan C. B.
中科院分区：
文献类型：
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作者：
da Rocha, Cecilia Teixeira;Haase, Katherina;Mannsfeld, Stefan C. B.
低电压有机场效应晶体管（OFET）对于需要低功耗的有机电子应用（例如可穿戴电子产品、生物医学应用或移动的电子产品）来说非常感兴趣。在这项工作中，提出了一种方法，导致从溶液中制造的晶体管具有高电荷载流子迁移率，工作电压< 1 V。通过将小分子半导体6，13-双（三异丙基甲硅烷基-乙炔基）并五苯（TIPS-并五苯）与聚苯乙烯共混，可以实现良好的膜覆盖率和均匀性以及半导体膜。这种相对于纯膜的厚度减小导致高分数的TIPS-并五苯的高迁移率多晶型物和具有连续的高度结晶域的优异的膜形态。利用SiO_2作为电介质，其平均空穴迁移率高达8.3 cm（2）V ~（-1），最大空穴迁移率高达12.3 cm（2）V ~（-1），与TIPS-并五苯的记录相比，这一结果是令人满意的，特别是当考虑到方法的简单性时。通过将优化的半导体共混物沉积在与4，4-（六氟异亚丙基）二邻苯二甲酸酐交联的聚乙烯基苯酚的溶液基聚合物介电层上，对于溶液处理的超低压OFET器件（在
Low-voltage organic field-effect transistors (OFETs) are of great interest for organic electronics applications that require low power consumption such as wearable electronics, biomedical applications, or mobile electronics. In this work, an approach leading to transistors fabricated from solution with high charge carrier mobilities operating at voltages < 1 V is presented. By blending the small-molecule semiconductor 6,13-bis(triisopropylsilyl-ethynyl)pentacene (TIPS-pentacene) with polystyrene it is possible to achieve good film coverage and uniformity as well as ultrathin semiconductor films. This reduction in thickness relative to neat films results in a high fraction of the high-mobility polymorph of TIPS-pentacene and excellent film morphologies with continuous highly crystalline domains. OFETs using SiO2 as the dielectric with average hole mobilities as high as 8.3 cm(2) V-1 s(-1) and maximum mobilities of up to 12.3 cm(2) V-1 s(-1) which favorably compares with the previous record for TIPS-pentacene, especially when considering the simplicity of the approach, are demonstrated. By depositing the optimized semiconductor blends on solution-based polymer dielectric layers of polyvinylphenol, cross-linked with 4,4-(hexafluoroisopropylidene)diphthalic anhydride, a record-high mobility of 4.2 cm(2) V-1 s(-1) for solution-processed, ultralow-voltage OFET devices (operating at