Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation
Analysis of the hole transport through valence band states in heavy Al doped 4H-SiC by ion implantation
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DOI：
10.1063/1.4852515
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发表时间：
2013-12-28
影响因子：
3.2
通讯作者：
Nipoti, R.
中科院分区：
文献类型：
--
作者：
Parisini, A.;Nipoti, R.
在电荷中性条件和弛豫时间近似下，分析了Al离子注入重掺杂p型4 H-SiC（Al）材料的霍尔空穴密度和霍尔迁移率数据的温度依赖关系。考虑了注入Al浓度在10（19）-10（20）cm（-3）范围内和1950 ℃/5 min常规退火的样品。计算的可靠性进行了严格的讨论，重点关注的杂质散射机制和所采用的霍尔因子的模型的有效性限制。通过引入经验质量各向异性因子，给出了支持普遍使用文献中报道的p型4 H-SiC的霍尔因子的独特实验评估的理由，该霍尔因子针对1.8 x 10（15）cm（-3）-2 x 10（18）cm（-3）范围内的Al受体密度进行评估。霍尔空穴密度和迁移率数据的同时拟合表明，Al杂质的电激活程度大于或高于70%，并且补偿了约10%的Al受体。(C)2013 AIP Publishing LLC.
The temperature dependence of the Hall hole density and the Hall mobility data of heavy doped p-type 4H-SiC(Al) materials obtained by Al_ ion implantation have been analysed in the frame of the charge neutrality condition and the relaxation time approximation. Samples with implanted Al concentrations in the range 10(19) -10(20) cm(-3) and 1950 degrees C/5 min conventional annealing have been taken into account. The reliability of the calculation has been critically discussed by focusing the attention on both the validity limits of the models for the impurity scattering mechanisms and the adopted Hall factor. By introducing empirical mass anisotropy factors, reasons were given in favour of a generalized use of the unique experimental evaluation of the Hall factor reported by the literature for p-type 4H-SiC, assessed for an Al acceptor density in the range of 1.8 x 10(15) cm(-3) -2 x 10(18) cm(-3). The simultaneous fits of the Hall hole density and mobility data indicate an electrical activation of the Al impurities of the order or higher than 70% and a compensation of about 10% of the Al acceptors. (C) 2013 AIP Publishing LLC.