Electron‐beam crystallized large grained silicon solar cell on glass substrate
Electron‐beam crystallized large grained silicon solar cell on glass substrate
复制标题
玻璃基板上电子束晶化大晶硅太阳能电池
DOI：
10.1002/pip.1098
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发表时间：
2011
期刊：
影响因子：
--
通讯作者：
T. F. Schulze
中科院分区：
文献类型：
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作者：
D. Amkreutz;Jörg Müller;M. Schmidt;T. Hänel;T. F. Schulze
薄膜异质发射极太阳能电池具有约10微米厚的大晶粒多晶硅吸收体，已在玻璃上制备。电池概念的基础是沉积在SiC：B层上的非晶或纳米晶硅层的电子束结晶。SiC：B层覆盖在市售的玻璃衬底上，用作扩散阻挡层、接触层和掺杂源。对于硅吸收体沉积，使用低压化学气相沉积。连续应用的电子束晶化工艺产生的多晶硅层的晶粒尺寸高达1 × 10 mm 2，缺陷密度低。吸收体的高电子质量体现在高达545 mV的开路电压上，这是利用成熟的a-Si：H异质发射极技术实现的。版权所有© 2011约翰威利父子有限公司.
Thin film hetero‐emitter solar cells with large‐grained poly‐silicon absorbers of around 10 µm thickness have been prepared on glass. The basis of the cell concept is electron‐beam‐crystallization of an amorphous or nanocrystalline silicon layer deposited onto a SiC:B layer. The SiC:B layer covers a commercially well available glass substrate, serving as diffusion barrier, contact layer and dopand source. For silicon absorber deposition a low pressure chemical vapour deposition was used. The successively applied e‐beam crystallization process creates poly‐silicon layers with grain sizes up to 1 × 10 mm2 with low defect densities. The high electronic quality of the absorber is reflected in open circuit voltages as high as 545 mV, which are realized making use of the well‐developed a‐Si:H hetero‐emitter technology. Copyright © 2011 John Wiley & Sons, Ltd.