High I on /I off Ge-source ultrathin body strained-SOI Tunnel FETs - impact of channel strain, MOS interfaces and back gate on the electrical properties
High I on /I off Ge-source ultrathin body strained-SOI Tunnel FETs - impact of channel strain, MOS interfaces and back gate on the electrical properties
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发表时间：
2014
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通讯作者：
Minsoo Kim;Y. Wakabayashi;R. Nakane;M. Yokoyama;M. Takenaka;Takagi Shinichi
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作者：
Minsoo Kim;Y. Wakabayashi;R. Nakane;M. Yokoyama;M. Takenaka;Takagi Shinichi
展示了Ge源/应变硅沟道异质结隧道FET的高性能工作。结果表明，由于有效能带隙的减小，硅沟道中的张应变可以提高隧道电流。氮气热处理可以改善栅沟道管理信息系统的界面，从而导致SS的改善。制作的Ge/sSOI(1.1%)隧道FET具有较高的离子/离子关断比(Ion/Ioff Ratio)大于107，陡峭的最小SS为28 mV/dec。还研究了背偏压效应，并通过正背偏压改善了离子和平均SS。
High performance operation of Ge-source/strained-Si- channel hetero-junction tunnel FETs is demonstrated. It is found that tensile strain in Si-channels can enhance the tunneling current because of the reduced effective energy bandgap, Eg.eff. Nitrogen heat-treatment can improve the gate-to-channel MIS interface which causes SS improvement. The fabricated Ge/sSOI(1.1 %) tunnel FETs show high Ion/Ioff ratio over 10 7 and steep minimum SS of 28 mV/dec. Back biasing effects are also investigated and the Ion and average SS are improved by positive back biasing.