The toughest transistor yet
The toughest transistor yet
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DOI：
10.1109/6.999791
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发表时间：
2002-05-01
期刊：
影响因子：
3.1
通讯作者：
Mishra, UK
中科院分区：
文献类型：
--
作者：
Eastman, LF;Mishra, UK
GaN晶体管能够承受极高的热量，并且能够处理远远超出硅、砷化镓、碳化硅或基本上任何其他半导体可能的频率和功率水平。这种口径的频率和功率处理能力可以使放大器、调制器和先进通信网络的其他关键组件完全不同。GaN晶体管可以使基站放大器的效率提高两倍或三倍，因此给定区域可以由更少的基站覆盖，或者更有可能以更高的速率充斥更多的数据。这些相同的速度、高功率处理和耐热特性也适用于晶体管的许多其他用途。
GaN transistors withstand extreme heat and are capable of handling frequencies and power levels well beyond those possible with silicon, gallium arsenide, silicon carbide, or essentially any other semiconductor yet fabricated. Frequency and power-handling capabilities of this caliber could make all the difference in amplifiers, modulators, and other key components of the advanced communications networks. GaN transistors could double or triple the efficiency of base-station amplifiers, so that a given area could be covered by fewer base stations or, more likely, be flooded with more data at much higher rates. These same characteristics of speed, high-power handling, and heat resistance would also suit the transistors for many other uses.