Adatom kinetics on and below the surface: The existence of a new diffusion channel
Adatom kinetics on and below the surface: The existence of a new diffusion channel
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DOI：
10.1103/physrevlett.90.056101
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发表时间：
2003-02-07
影响因子：
8.6
通讯作者：
Feenstra, RM
中科院分区：
文献类型：
--
作者：
Neugebauer, J;Zywietz, TK;Feenstra, RM
采用密度泛函理论与扫描隧道显微镜相结合，我们证明半导体表面上的金属薄膜可以为横向吸附原子传输打开一个有效且迄今为止未预期的扩散通道：吸附原子可能更喜欢在该金属层内扩散而不是在表面顶部扩散。基于这个概念，我们解释了最近的实验：我们解释了为什么以及何时In充当GaN表面上的表面活性剂，为什么Ga充当自表面活性剂，以及如何利用这种机制来优化III族氮化物的生长。
Employing density-functional theory in combination with scanning tunneling microscopy, we demonstrate that a thin metallic film on a semiconductor surface may open an efficient and hitherto not expected diffusion channel for lateral adatom transport: adatoms may prefer diffusion within this metallic layer rather than on top of the surface. Based on this concept, we interpret recent experiments: We explain why and when In acts as a surfactant on GaN surfaces, why Ga acts as an autosurfactant, and how this mechanism can be used to optimize group-III nitride growth.