Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates
Review of pendeo-epitaxial growth and characterization of thin films of GaN and AlGaN alloys on 6H-SiC(0001) and Si(111) substrates
复制标题
DOI：
10.1557/s1092578300000260
复制
发表时间：
2001
期刊：
影响因子：
--
通讯作者：
R. Davis;T. Gehrke;K. Linthicum;P. Rajagopal;A. Roskowski;T. Zheleva;E. Preble;C. Zorman;M. Mehregany;U. Schwarz;J. Schuck;R. Grober
中科院分区：
文献类型：
--
作者：
R. Davis;T. Gehrke;K. Linthicum;P. Rajagopal;A. Roskowski;T. Zheleva;E. Preble;C. Zorman;M. Mehregany;U. Schwarz;J. Schuck;R. Grober
通过在GaN/AlN/6H-SiC（0001）和GaN(0001)/AlN(0001)/ 3C-SiC(111)/Si（111）衬底上的有机金属气相沉积，在带有或不带有sinx顶掩膜的GaN种子条纹侧壁上通过垂晶外延（PE）生长出离散和聚结的单晶GaN和Al x Ga 1-x N层。利用扫描电镜和透射电镜分别对其外部组织和位错分布进行了观察。相对于初始氮化镓种子层，侧向生长的侧壁区域和生长在sinx掩模上的区域的位错密度至少降低了5个数量级。通过x射线和选择区域衍射测定了在sinx掩膜上生长的聚结GaN薄膜的倾斜度为0.2°；然而，悬浮在SiC衬底之上的材料和生长在裸露条纹上的材料没有观察到倾斜。在表面生长的过长光致发光材料在~3.45 eV处有一个强的低温光致发光带边峰，峰宽<300µeV
Discrete and coalesced monocrystalline GaN and Al x Ga 1-x N layers grown via pendeo-epitaxy (PE) originated from side walls of GaN seed stripes with and without SiN x top masks have been grown via organometallic vapor phase deposition on GaN/AlN/6H-SiC(0001) and GaN(0001)/AlN(0001)/ 3C-SiC(111)/Si(111) substrates. Scanning and transmission electron microscopies were used to evaluate the external microstructures and the distribution of dislocations, respectively. The dislocation density in the laterally grown sidewall regions and in the regions grown over the SiN x masks was reduced by at least five orders of magnitude relative to the initial GaN seed layers. Tilting of 0.2 ° in the coalesced GaN epilayers grown over the SiN x masks was determined via X-ray and selected area diffraction; however, tilting was not observed in the material suspended above the SiC substrate and that grown on unmasked stripes. A strong, low-temperature photoluminescence band-edge peak at ~3.45 eV with a FWHM of <300 µ eV was determined on the overgrowth material grown on the