Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes
Observation of 430 nm electroluminescence from ZnO/GaN heterojunction light-emitting diodes
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DOI：
10.1063/1.1615308
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发表时间：
2003-10-06
影响因子：
4
通讯作者：
Ataev, BM
中科院分区：
文献类型：
--
作者：
Alivov, YI;Van Nostrand, JE;Ataev, BM
在这项工作中，我们报告了基于n-ZnO/p-GaN材料系统的宽带隙异质结发光二极管的生长、制造和器件表征。该层结构通过首先通过分子束外延在Al 2 O 3（0001）上生长厚度为1 μ m的Mg掺杂的GaN膜，然后通过化学气相沉积在p-GaN层上生长厚度为1 μ m的Ga掺杂的ZnO膜来实现。在正向偏压下，该结构在室温下具有蓝紫区的电致发光，峰值波长为430 nm。报道了这些发光二极管的光电流特性，并且观察到在低电流范围内斜率为1.9的超线性行为和在高电流范围内斜率为0.85的次线性行为。(C)2003年，美国物理学会。
In this work, we report on the growth, fabrication, and device characterization of wide-band-gap heterojunction light-emitting diodes based on the n-ZnO/p-GaN material system. The layer structure is achieved by first growing a Mg-doped GaN film of thickness 1 mum on Al2O3(0001) by molecular-beam epitaxy, then by growing Ga-doped ZnO film of thickness 1 mum by chemical vapor deposition on the p-GaN layer. Room-temperature electroluminescence in the blue-violet region with peak wavelength 430 nm is observed from this structure under forward bias. Light-current characteristics of these light-emitting diodes are reported, and a superlinear behavior in the low current range with a slope 1.9 and a sublinear behavior with a slope 0.85 in the high current range are observed. (C) 2003 American Institute of Physics.