Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe3-xMnxSi Epilayers Grown on Ge(111)
Ferromagnetism and Electronic Structures of Nonstoichiometric Heusler-Alloy Fe3-xMnxSi Epilayers Grown on Ge(111)
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DOI：
10.1103/physrevlett.102.137204
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发表时间：
2009-04-03
影响因子：
8.6
通讯作者：
Miyao, M.
中科院分区：
文献类型：
--
作者：
Hamaya, K.;Itoh, H.;Miyao, M.
为了研究与IV族半导体自旋电子学兼容的铁磁材料，我们证明了通过调节Mn组分x来控制外延生长在Ge（111）上的Heusler合金Fe 3-xMnxSi的铁磁性质。有趣的是，我们得到的L2（1）有序结构，即使非化学计量的原子组成。当x = 0.6时，外延层的居里温度超过300 K。理论计算表明，非化学计量比Fe_（3-x）Mn_xSi合金的电子结构在0.75
For the study of ferromagnetic materials which are compatible with group-IV semiconductor spintronics, we demonstrate control of the ferromagnetic properties of Heusler-alloy Fe3-xMnxSi epitaxially grown on Ge(111) by tuning the Mn composition x. Interestingly, we obtain L2(1)-ordered structures even for nonstoichiometric atomic compositions. The Curie temperature of the epilayers with x approximate to 0.6 exceeds 300 K. Theoretical calculations indicate that the electronic structures of the nonstoichiometric Fe3-xMnxSi alloys become half-metallic for 0.75