ScAlMgO4 as a promising substrate for InGaN-based long wavelength emitters: demonstration of far-red LEDs
ScAlMgO4 as a promising substrate for InGaN-based long wavelength emitters: demonstration of far-red LEDs
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DOI：
10.1117/12.2649997
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发表时间：
2023-03
期刊：
影响因子：
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通讯作者：
M. Funato;Keita Maehara;Y. Matsuda;T. Ozaki;Y. Kawakami
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文献类型：
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作者：
M. Funato;Keita Maehara;Y. Matsuda;T. Ozaki;Y. Kawakami
氮化物半导体InGaN是用于诸如发光二极管（LED）和激光二极管的可见光器件的关键材料。最近，InGaN基红色LED由于在微型LED显示器中的潜在应用而获得越来越多的关注。然而，发射效率在蓝色光谱范围内是最高的，并且在较长的发射波长处急剧降低。一个原因是InGaN发射极和GaN的主体材料之间的大的晶格失配。为了避免晶格失配引起的问题，ScAlMgO 4衬底是有吸引力的，因为主体材料可以从GaN替换为与ScAlMgO 4晶格匹配的InGaN，这可以减少InGaN发射极中的应变。在此，我们首次展示了基于晶格匹配的InyGa 1 − yN/ScAlMgO 4（0001）模板上生长的InxGa 1 −xN/InyGa 1 −yN量子威尔斯（x < y）阱的远红外（波长为1000 nm）LED。
A nitride semiconductor InGaN is a key material for visible optical devices such as light-emitting diodes (LEDs) and laser diodes. Recently, InGaN-based red LEDs attain increasing interest due to potential application in micro- LED displays. However, the emission efficiency is the highest in the blue spectral range and drastically decreases at longer emission wavelengths. One reason is the large lattice mismatch between the InGaN emitters and the host material of GaN. To circumvent lattice-mismatch-induced issues, ScAlMgO4 substrates are attractive because the host material can be replaced from GaN to InGaN lattice matched to ScAlMgO4, which can reduce strain in the InGaN emitters. Herein, we demonstrate far-red (∼700 nm wavelength) LEDs based on InxGa1−xN/InyGa1−yN quantum wells (x < y) grown on lattice-matched InyGa1−yN/ScAlMgO4 (0001) templates for the first time.