Reduced threshold vertical-cavity surface-emitting lasers
Reduced threshold vertical-cavity surface-emitting lasers
复制标题
降低阈值垂直腔表面发射激光器
DOI：
--
复制
发表时间：
1994
期刊：
影响因子：
--
通讯作者：
L. Coldren
中科院分区：
文献类型：
--
作者：
D. Young;A. Kapila;J. Scott;V. Malhotra;L. Coldren
蚀刻柱垂直腔面发射激光器结构已被制造纳入侧壁硫化物钝化，以减少在暴露的量子阱边缘的表面复合速度。钝化后的器件表面复合速度降低了25%，阈值电流最小为0.67 mA。
Etched-pillar vertical-cavity surface-emitting laser structures have been fabricated incorporating sidewall sulphide passivation to reduce the surface recombination velocity at the exposed quantum well edges. The passivated devices exhibit a 25% reduction in surface recombination velocity and a minimum 0.67 mA threshold current.