Enhancement of low-field-magnetoresistive response of tunnel-type magnetoresistance in metal-nonmetal granular thin films
Enhancement of low-field-magnetoresistive response of tunnel-type magnetoresistance in metal-nonmetal granular thin films
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DOI：
10.1016/s0304-8853(98)00169-3
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发表时间：
1998-09-01
影响因子：
2.7
通讯作者：
Fujimori, H
中科院分区：
文献类型：
--
作者：
Kobayashi, N;Ohnuma, S;Fujimori, H
通过在一对软磁坡莫合金（Fe 66 Ni 34）薄膜之间的横向间隙中放置一个大的TMR的金属-非金属薄膜的混合结构，实现了金属和非金属颗粒薄膜在低磁场下的隧道型磁电阻的高响应.我们称这种混合结构为“间隙纳米颗粒（GIG）”薄膜。该膜是通过使用离子铣削和RF溅射方法的微加工技术制备的。对于Fe 66 Ni 34-Co 39 Y14 O 47-Fe 66 Ni 34 GIG膜，在约2 Oe下获得的最佳MR值为2- 3%，其比Co 39 Y14 O 47单层膜的值大约250倍。这种巨大的增强归因于小磁场在耦合软磁Fe_（66）Ni_（34）薄膜之间的狭窄空间中产生的强磁通量的作用。(C)1998 Elsevier Science B. V.保留所有权利。
A very high response of the tunnel-type magnetoresistance at low magnetic fields for metal and nonmetal granular thin films was achieved by constructing the following hybrid structure: a large TMR Go-based metal-nonmetal film was placed in the lateral gap between a couple of soft magnetic permalloy, Fe66Ni34, films. We call our hybrid structure 'nano-granular in gap (GIG)' film. This film was prepared by a micro processing technique using ion milling and RF sputtering methods. The best MR values obtained at about 2 Oe were 2-3 % fur a Fe66Ni34-Co39Y14O47-Fe66Ni34 GIG film, which was about 250 times larger than the value for a single-layered film of Co39Y14O47. This huge enhancement was attributed to the effect of the strong magnetic flux created at the narrow space between the coupled soft magnetic Fe66Ni34 films by Small applied magnetic fields. (C) 1998 Elsevier Science B.V. All rights reserved.