Underlayer and rinse materials for improving EUV resist performance
Underlayer and rinse materials for improving EUV resist performance
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用于提高 EUV 抗蚀剂性能的底层和冲洗材料
DOI：
10.1117/12.2013363
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
G. Pawlowski
中科院分区：
文献类型：
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作者：
M. Padmanaban;JoonYeon Cho;T. Kudo;S. Mullen;H. Yao;G. Noya;Y. Matsuura;Y. Ide;Jin Li;G. Pawlowski
光致抗蚀剂在实现图案化过程中起着关键作用，而光致抗蚀剂化学的发展对该行业继续缩小器件尺寸的能力做出了重大贡献。然而，随着图案化越来越复杂的越来越小的特征，光刻胶的性能需要大量的材料来支持，如减反射涂层和防塌陷漂洗剂。底部减反射涂层被广泛用于控制I线和DUV曝光中反射率驱动的图案保真度。虽然在EUV波长不需要这样的反射率控制，但已经证明，使用具有高EUV光子吸收(EPA)单元的EUV底层(EBL)涂层可以改善抗蚀剂性能，例如灵敏度和抗蚀剂-衬底中毒，从而改善分辨率和工艺窗口。EBL还有助于减少带外(OOB)辐射的影响。传统上，显影步骤后的最终光致抗蚀剂图像清洗是使用去离子水执行的，通常称为“漂洗步骤”。近年来，图形崩塌已发展成为高分辨率光刻中的一种主要失效模式，其原因是水诱导的强大毛细管力导致图形弯曲(图形粘连)或附着失效。随着特征几何形状的减少(DPT浸入式光刻、EUV)，漂洗解决方案防止图案崩溃的好处也增加了。此外，这种漂洗液在某些情况下可以改善缺陷和LWR。在这篇文章中，我们描述了AZ®EBL系列EUV底层材料和EUV Firm®Extreme™漂洗解决方案单独和组合使用时的优势。结果表明，底层材料的使用可以通过改善抗蚀剂的轮廓来帮助提高低写入率。使用Strong®Extreme™漂洗剂可显著改善塌陷余量和缺陷总数。
Photoresists play a key role in enabling the patterning process, and the development of their chemistry has contributed significantly to the industry’s ability to continue shrinking device dimensions. However, with the increasing complexity of patterning ever smaller features, photoresist performance needs to be supported by a large number of materials, such as antireflective coatings and anti-collapse rinses. Bottom anti-reflective coatings are widely used to control reflectivity-driven pattern fidelity in i-line and DUV exposures. While no such reflectivity control is required at EUV wavelengths, it has been demonstrated that use of an EUV underlayer (EBL) coating with high EUV photon absorption (EPA) unit can improve resist performance such as sensitivity and resist-substrate poisoning, thereby improving resolution and process window. EBL can also help to reduce the effect of out-of-band (OoB) irradiation. Traditionally, final photoresist image cleaning after the develop step has been performed using de-ionized water, generally known as a “rinse step”. More recently pattern collapse has developed to a major failure mode in high resolution lithography attributed to strong capillary forces induced by water resulting in pattern bending (‘pattern sticking’) or adhesion failure. With decreasing feature geometries (DPT immersion lithography, EUV) the benefit of rinse solutions to prevent pattern collapse has increased. In addition such rinse solutions can in some cases improve defects and LWR. In this paper we describe the advantages of AZ® EBL series of EUV underlayer materials and EUV FIRM® EXTREME™ rinse solutions when applied individually and in combinations. It is demonstrated that the use of underlayer materials can help improve LWR through improvement of resist profiles. Use of FIRM® EXTREME™ rinse is shown to provide significant improvement in collapse margin and total defect counts.
巴黎南大学，IN2P3-CNRS（法国）
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